Leiditech LMTL1P10 ersetzt PANJIT (PJA3471) und MCC (SI01P10)
The PMOS LMTL1P10 produced by Shanghai Leiditech can replace the PJA3471 from Panjit and the SI01P10 from MCC. Many customers have already chosen LMTL1P10 as an alternative. Customers can enjoy better prices and shorter delivery times. It is particularly favored in some small electronic devices with limited space.
The comparison of the three MOS parameters is as follows:

Leiditech LMTL1P10 is a cost-effective and versatile P-channel MOSFET. Its combination of 100V voltage rating and SOT-23 small package makes it an ideal choice in various scenarios where safe and compact control of power on/off is required, especially suitable for power management design in consumer electronics, office equipment, automotive electronics, and industrial control fields.
1、LMTL1P10 Characteristics
l VDS = -100V ID =-0.9 A
l RDS(ON), VGS@-10V, ID@-0.8A<650mΩ
l RDS(ON), VGS@-4.5V, ID@-0.4A<700mΩ
l Enhanced trench process
l SOT-23 —Compact in size(approximately 3mm x 3mm), saves circuit board space, and is suitable for high-density assembly.
2、LMTL1P10 Application
l Core Application: High-end power switch/load switch
Connect the MOSFET in series between the power supply (Vcc) and the load. Use the MCU GPIO to control the gate level through a simple circuit (such as an NPN transistor) or a small N-MOS, achieving "one-click power-off".
Advantages: It can completely cut off the power supply of peripheral modules (such as sensors, communication modules, display backlight), achieving zero standby power consumption, which is a key design for energy saving of battery-powered devices.
Applicable devices: Smart home devices, portable instruments, IoT terminals.

l Automotive electronic auxiliary circuits: Used for power switching of on-board devices (navigation/recorders), with a 100V withstand voltage capable of handling transient voltages of the vehicle power supply, and SOT-23 packaging meeting the demand for miniaturization.
l Office equipment and industrial control: Utilizing its 100V withstand voltage and nearly 1A current capacity, it is highly suitable for driving small DC motors, cooling fans, solenoid valves, indicator lights, etc., in printers, scanners, and automation equipment.
l PWM control and simple DC-DC circuits: Due to its fast-switching speed and low on-resistance, it can be used for low-frequency PWM dimming, speed control, etc. It can also be used as a power switch tube in simple switching power supplies or linear regulators, suitable for non-isolated, low-power voltage conversion.
3、Selection and Usage Considerations for MOSFET
1. Drive circuit: To ensure that the drive circuit can provide sufficient negative Vgs (usually requiring ≤ -4.5V or -10V, depending on the specific part No. and required Rds(on)), to make it fully conductive and reduce losses, a NPN transistor (such as MMBT3904) is commonly used to form a pull-down switch, controlled by the 3.3V/5V GPIO of the MCU.
2. Anti-interference of gate resistance: By connecting a small resistor (such as 10-100Ω) in series on the drive path, it can suppress gate oscillation and reduce EMI.
3. Gate protection: It is essential to parallel a resistor (such as 10kΩ) between the gate and source terminals to ensure that the MOSFET is in a certain off state when the MCU does not output, preventing accidental conduction.
4. Body diode: There is a parasitic diode from the source terminal (S) to the drain terminal (D) inside the P-MOS. When used as a switch, this diode usually has the opposite direction. However, when the inductive load (such as a motor, relay) is turned off, the continuation path needs to be considered. This diode sometimes acts as a continuation path, but an additional Schottky diode may be required to share the load.
5. Power consumption and heat dissipation: The SOT-23 package has limited heat dissipation capacity. The on-state loss (P_loss) should be calculated using the formula P_loss = I² * Rds(on) to ensure operation within the safe temperature range.
Hinterlasse eine Antwort
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